Product Overview
The Hynix 4GB 3200MHz DDR4 PC4-25600 non-ECC Unbuffered 260-pin SoDIMM OEM Laptop Memory HMA851S6CJR6N-XN is a high-performance memory module designed to enhance your laptop's capabilities. With a speed of 3200MHz, this memory provides rapid data processing, allowing your applications to run smoothly and efficiently.
Engineered for the modern computing environment, this 4GB module offers a perfect balance of speed and capacity, making it an ideal choice for casual users and gamers alike. The non-ECC (Error-Correcting Code) design ensures that while it provides solid performance, it is particularly suited for non-critical applications, where reliability without additional buffering is sufficient.
The memory module features a compact 260-pin layout and operates at a low voltage of just 1.2V, contributing to lower power consumption while maintaining high levels of performance. This energy efficiency is especially beneficial for laptop users seeking to extend battery life and reduce thermal output during extended use.
Installation is straightforward, making it accessible for those looking to upgrade their systems without extensive technical knowledge. The HMA851S6CJR6N-XN model has been rigorously tested for key functionalities, ensuring that it meets the quality standards necessary for resale. It qualifies under R2/Ready for Resale guidelines, reflecting its reliability and durability.
Whether you are upgrading an older machine or building a new one from scratch, the Hynix 4GB DDR4 RAM is a stellar choice for enhancing your laptop's performance, ensuring seamless multitasking, efficient program loads, and an overall improved computing experience.
Engineered for the modern computing environment, this 4GB module offers a perfect balance of speed and capacity, making it an ideal choice for casual users and gamers alike. The non-ECC (Error-Correcting Code) design ensures that while it provides solid performance, it is particularly suited for non-critical applications, where reliability without additional buffering is sufficient.
The memory module features a compact 260-pin layout and operates at a low voltage of just 1.2V, contributing to lower power consumption while maintaining high levels of performance. This energy efficiency is especially beneficial for laptop users seeking to extend battery life and reduce thermal output during extended use.
Installation is straightforward, making it accessible for those looking to upgrade their systems without extensive technical knowledge. The HMA851S6CJR6N-XN model has been rigorously tested for key functionalities, ensuring that it meets the quality standards necessary for resale. It qualifies under R2/Ready for Resale guidelines, reflecting its reliability and durability.
Whether you are upgrading an older machine or building a new one from scratch, the Hynix 4GB DDR4 RAM is a stellar choice for enhancing your laptop's performance, ensuring seamless multitasking, efficient program loads, and an overall improved computing experience.
Hynix 4GB 3200MHz DDR4 PC4-25600 non-ECC Unbuffered 260-pin Single Rank 1.2V SoDIMM OEM Laptop Memory HMA851S6CJR6N-XN
*Tested for key functions. R2/Ready for resale.
