Product Overview
The Micron 4GB 1600MHz DDR3 PC3-12800 non-ECC Unbuffered SoDIMM OEM Memory (Model MT8KTF51264HZ-1G6E1) is designed to enhance your computing experience with its reliable performance and efficient design. Specifically crafted for laptops and small form factor systems, this 204-pin SO-DIMM module provides a quick and responsive upgrade to your device's memory capacity.
Operating at a speed of 1600MHz, this DDR3 memory module ensures swift data transfer rates to handle everyday computing tasks with ease, whether you’re browsing the web, streaming videos, or multitasking with various applications. The 4GB capacity strikes the perfect balance between affordability and performance, making it an ideal choice for users looking to improve their system's responsiveness without overspending.
Featuring a CAS latency of 11, the MT8KTF51264HZ-1G6E1 delivers quick access to stored data, ensuring that your device operates smoothly during high-performance tasks. With an operating voltage of 1.35V, this memory module is energy-efficient, helping to prolong your laptop’s battery life while maintaining optimal performance levels.
Being non-ECC and unbuffered, this memory module is well-suited for standard computing environments, providing a cost-effective solution for everyday applications. Its OEM status ensures that you receive a product built to Micron’s high-quality standards, making it a trusted choice for both casual users and tech enthusiasts looking to boost their system's capabilities.
Upgrade your memory with the Micron 4GB DDR3 SO-DIMM, and experience a seamless blend of performance, efficiency, and reliability for all your digital tasks.
Operating at a speed of 1600MHz, this DDR3 memory module ensures swift data transfer rates to handle everyday computing tasks with ease, whether you’re browsing the web, streaming videos, or multitasking with various applications. The 4GB capacity strikes the perfect balance between affordability and performance, making it an ideal choice for users looking to improve their system's responsiveness without overspending.
Featuring a CAS latency of 11, the MT8KTF51264HZ-1G6E1 delivers quick access to stored data, ensuring that your device operates smoothly during high-performance tasks. With an operating voltage of 1.35V, this memory module is energy-efficient, helping to prolong your laptop’s battery life while maintaining optimal performance levels.
Being non-ECC and unbuffered, this memory module is well-suited for standard computing environments, providing a cost-effective solution for everyday applications. Its OEM status ensures that you receive a product built to Micron’s high-quality standards, making it a trusted choice for both casual users and tech enthusiasts looking to boost their system's capabilities.
Upgrade your memory with the Micron 4GB DDR3 SO-DIMM, and experience a seamless blend of performance, efficiency, and reliability for all your digital tasks.
| Brand | Micron |
| Model | MT8KTF51264HZ-1G6E1 |
| Type | 204-Pin DDR3 SO-DIMM |
| Capacity | 4GB |
| Speed | DDR3 1600 (PC3 12800) |
| Cas Latency | 11 |
| Voltage | 1.35V |
| ECC | No |
| Buffered/Registered | Unbuffered |
